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| Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25C) Ratings 1700 1700 600 5 30 20 10 100 3.5 150 -55 to +150 Unit V V V V A A A W C C 5 23.4 22.00.5 2.0 1.2 5 18.60.5 5 5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 4.0 2.00.2 1.10.1 2.0 0.70.1 5.450.3 3.30.3 0.70.1 5.450.3 5.50.3 5 1 2 3 2.0 1:Base 2:Collector 3:Emitter TOP-3E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time (TC=25C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1000V, IE = 0 VCB = 1700V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8A VCE = 10V, IC = 0.1A, f = 0.5MHz IC = 12A, IB1 = 2.4A, IB2 = -4.8A 3 4.0 0.3 7 min typ max 50 1 50 14 3 1.5 V V MHz s s Unit A mA A 1 Power Transistors PC -- Ta 140 2SC5418 Area of safe operation (ASO) 100 ICP 10 IC 10ms DC 1 1ms t=100s 30 Area of safe operation, horizontal operation ASO 35 f=64kHz, TC<90C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. Collector power dissipation PC (W) 120 (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink. (3) Without heat sink Collector current IC (A) 100 Collector current IC (A) 25 80 20 60 0.1 15 40 10 0.01 20 (2) (3) 0 0 20 40 60 80 100 120 140 160 0.001 1 5 Non repetitive pulse TC=25C 3 10 30 100 300 1000 <1mA 0 500 1000 1500 2000 0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) 2 This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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